Sub-items: Oxford instrument 80mm xMax Silicon Drift EDS detector, GIF Tridiem EELS and Ultrascan® and CCD camera.
Our facility offers advanced capabilities for crystallographic and atomic structure analysis through conventional diffraction contrast imaging (bright field/dark field) and selected area/convergent beam diffraction. High-resolution phase contrast imaging is available for studying atomic structures of defects, and interfaces, and imaging individual grains as small as a few nanometres in diameter.
The system supports 80 kV alignment and liquid nitrogen cryo-cooling for beam-sensitive materials. Chemical analysis is facilitated by energy dispersive X-ray (EDX) and electron energy loss spectroscopy (EELS), which can also probe the bonding environment of atoms, such as distinguishing sp2/sp3 bonding in carbon. Additionally, energy-filtered TEM (EFTEM) enables rapid mapping of chemical elements over large regions.
Our scanning transmission electron microscopy (STEM) option includes high-angle annular dark field (HAADF) imaging for detailed structural analysis.